| PART |
Description |
Maker |
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N90L-TF1-T 10N90G-TF1-T 10N90G-TA3-T 10N90L-TA3- |
10 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| CM900DUC-24NF |
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
|
Mitsubishi Electric Semicon...
|
| MMFT2955E MMFT2955E-D MMFT2955ET1 MMFT2955ET1G MMF |
Power MOSFET 1 Amp, 60 Volts P-Channel(1A锛?0V锛?娌??澧?己?????OS?烘?搴??)
Power MOSFET 1 Amp, 60 Volts P-Channel(1A60V，P沟道增强型功率MOS场效应管)
Power MOSFET 1 Amp, 60 Volts P-Channel SOT-223
|
ON Semiconductor
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SDR939/61 SDR936-61 SDR938/61 SDR936/61 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| IRFB20STRRPBF IRFB20SPBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| NTP27N06L-D NTB27N06L NTP27N06L |
Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK
|
ITT, Corp.
ON Semiconductor
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
|
